Dr. Naveenbalaji Gowthaman | Nanoelectronics Awards | Best Researcher Award

Dr. Naveenbalaji Gowthaman | Nanoelectronics Awards | Best Researcher AwardΒ 

Dr. Naveenbalaji Gowthaman, University of KwaZulu-Natal, South Africa

Dr. G. N. B. is a dynamic and results-oriented Engineering Lecturer with over a decade of experience in academia. He has a proven track record of excellence in curriculum development, student engagement, and fostering stimulating learning environments. Dr. G. N. B. excels at integrating industry standards and emerging technologies into coursework to enhance student learning outcomes. His expertise spans teaching, research proficiency, administrative management, conference engagement, publication authorship, and receiving awards for his contributions to the field.Dr. G. N. B.’s research interests include Nanotechnology Scale Device Design and Fabrication, Electrical Field Modeling in MOSFETs, RF Hybrid Applications in Semiconductor Devices, High-Speed Electronic Devices, Industry 4.0 Technologies, and IoT-Based Monitoring Systems.

 

Professional Profiles:

 

SCOPUS

 

ORCID

Professional Summary:

πŸŽ“ Dynamic and results-oriented Engineering Lecturer with over 10 years of experience and a proven track record of excellence in academia. Skilled in curriculum development, student engagement, and fostering a stimulating learning environment. Adept at integrating industry standards and emerging technologies into coursework to enhance student learning outcomes.

Masthead:

πŸ“š Teaching Expertise | πŸ”¬ Research Proficiency | 🏒 Administrative Management | πŸ“… Conference Engagement | πŸ“ Publication Authorship | πŸ† Award Recipient

Areas of Interests:

πŸ” Nanotechnology Scale Device Design and Fabrication | ⚑ Electrical Field Modeling in MOSFETs | πŸ“‘ RF Hybrid Applications in Semiconductor Devices | πŸš€ High-Speed Electronic Devices | 🏭 Industry 4.0 Technologies | 🌐 IoT-Based Monitoring Systems

Academic Qualifications:

  • πŸŽ“ Ph.D. in Information and Communication Engineering
    Anna University, Chennai, India, 2019
  • πŸŽ“ M.Sc. in Psychology – 7.188 CGPA
    Tamilnadu Open University, Chennai, India, 2019
  • πŸŽ“ M.B.A. in Information Systems – 80.25 %
    Annamalai University, Chidambaram, India, 2017
  • πŸŽ“ M.E. in VLSI Design – 8.74 CGPA – 17th rank in Anna University, Chennai
    Madha Engineering College, Chennai, India, 2013
  • πŸŽ“ B.E. in Electronics and Communication Engg. – 81.08 %
    Arasu Engineering College, Kumbakonam, India, 2011

Professional Certification:

  • πŸŽ“ Post Doctoral Research Fellow, Electronic Engineering, University of KwaZulu-Natal, South Africa, 2024
  • πŸ“œ Diploma in Electrical Studies, United States Agency for International Development (USAID), 2017
  • πŸ“œ Diploma in Teaching Skills for Educators, Global Text Project, 2017

Work Experience:

  • πŸ”¬ Postdoctoral Research Fellow cum Lecturing (Analogue Electronics I), Feb 2021 to Jan 2024
    • Cutting-Edge Research in Nanotechnology and Semiconductor Devices with Focus on Cylindrical Surrounding Double-Gate MOSFETs and RF Applications
    • Electronic Engineering, Howard College, University of KwaZulu-Natal, Durban, South Africa
  • πŸ‘¨β€πŸ« Assistant Professor – Grade I, Jun 2015 to Feb 2020
    • SNS College of Technology, Coimbatore, India
  • πŸ‘¨β€πŸ« Assistant Professor – Grade I, Oct 2013 to Apr 2015
    • Sudharsan Engineering College, Pudukottai, India

Publication Top Notes:

Automatic hand sanitizer dispenser by industrial automation using arduino and photodiode

Analytical Modeling of [001] Orientation in Silicon Trigate Rectangular Nanowire Using a Tight-Binding Model

Investigations on Cylindrical Surrounding Double-gate (CSDG) Mosfet using ALXGA1-XAS/INP: PT with LA2O3Β Oxide Layer for Fabrication

Electrical characteristic analysis of Al0.43Ga0.57As cylindrical surrounding double-gate (CSDG) MOSFET: A nano-material sensing approach with fabrication technology

Analytical Subthreshold Model of Electrical Field-Effect for the Capacitance in Cylindrical Surrounding Double-Gate MOSFET Paradigm